Silicon Substitution in Monolayer Hexagonal Boron Nitride
نویسندگان
چکیده
منابع مشابه
Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge biza...
متن کاملCorrosion resistance of monolayer hexagonal boron nitride on copper
Hexagonal boron nitride (hBN) is a layered material with high thermal and chemical stability ideal for ultrathin corrosion resistant coatings. Here, we report the corrosion resistance of Cu with hBN grown by chemical vapor deposition (CVD). Cyclic voltammetry measurements reveal that hBN layers inhibit Cu corrosion and oxygen reduction. We find that CVD grown hBN reduces the Cu corrosion rate b...
متن کاملGrowth and Etching of Monolayer Hexagonal Boron Nitride.
The full spectrum from attachment-kinetic-dominated to diffusion-controlled modes is revealed for the cases of monolayer h-BN chemical vapor deposition (CVD) growth and Ar/H2 etching. The sets of grown and etched structures exhibit well-defined shape evolution from Euclidian to fractal geometry. The detailed abnormal processes for merging h-BN flakes into continuous structures or film are first...
متن کاملLarge-area monolayer hexagonal boron nitride on Pt foil.
Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. ...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2019
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927619011140